THINKANTECH Unveils 130W and 200W High-Density GaN+SiC Fast Charger Reference Designs
THINKANTECH has officially released two high-power reference designs for next-generation chargers, leveraging a hybrid architecture of Wide-Bandgap (WBG) semiconductors. These designs pair a Gallium Nitride (GaN) HEMT with a Silicon Carbide (SiC) diode on the primary side, implemented within a PFC+LLC resonant topology. This advanced configuration achieves markedly higher conversion efficiency compared to conventional flyback architectures.
Both the 130W and 200W GaN+SiC solutions provide a fixed voltage output, ideal for directly powering laptops. They are also designed for seamless integration with secondary-stage DC-DC converters to enable multi-port PD fast charging-a prevalent architecture in modern power adapters. Moreover, THINKANTECH's versatile GaN and SiC power devices can be readily adopted in other high-frequency applications, featuring driver compatibility with existing control solutions.
I. THINKANTECH 130W Fast Charger Reference Design
This 130W reference design utilizes a PFC+LLC topology to deliver a stable, fixed-voltage output.
Performance Highlights:
Output: 21.5V (Fixed)
Output Ripple: <150mVp-p
AC Input: 100-240V (Universal)
Full-Load Efficiency: >95%
Power Factor (PF): >0.94
Physical Specifications:
Dimensions: 67 x 67 x 25 mm
Power Density: 1.15W/cm³
Component Selection:
The design features three of THINKANTECH's XG6508B8 650V E-mode GaN HEMTs and a THINKANTECH XD6504D SiC diode. The control architecture is built around the Texas Instruments UCC28056 PFC controller and UCC256404 LLC controller. Synchronous rectification is managed by an Onsemi NCP4306 controller and Hunteck HGN090N06SL MOSFETs. High-voltage filtering employs YMIN KCX series capacitors, while the output stage uses YMIN VPX series surface-mount solid capacitors. The PCB layout reserves space for a secondary DC-DC module, enabling flexible and customizable multi-port output configurations.
According to manufacturer-provided test data, the solution achieves a full-load efficiency exceeding 95.5% at a 220V AC input.
II. THINKANTECH 200W Fast Charger Reference Design
The 200W reference design also employs a high-performance PFC+LLC topology for robust, fixed-voltage delivery.
Performance Highlights:
Output: 20V (Fixed)
Output Ripple: <150mVp-p
AC Input: 100-240V (Universal)
Full-Load Efficiency: >95%
Power Factor (PF): >0.94
Physical Specifications:
Dimensions: 80 x 65 x 25 mm
Power Density: 1.54W/cm³
Component Selection:
This solution utilizes the same powerful combination of three THINKANTECH XG6508B8 650V E-mode GaN HEMTs and the XD6504D SiC diode. The control suite is from onsemi, featuring the NCP1616A1 PFC controller and NCP13992AB LLC controller. The synchronous rectification stage consists of an NCP4306 controller paired with Hunteck HGN046N06AL MOSFETs. The board layout includes a heatsink for the rectifier bridge and terminal blocks for direct fixed-voltage output, making it an excellent platform for dedicated power supplies.
Test data from the manufacturer indicates the 200W solution achieves a peak conversion efficiency of 95.5% at a 220V AC input.
Summary
Test data for both reference designs confirms that the integration of THINKANTECH's SiC and GaN devices enables conversion efficiencies of up to 95.5%, underscoring the significant performance benefits of WBG semiconductors.
THINKANTECH specializes in delivering state-of-the-art 650V enhancement-mode (E-mode) GaN power devices (xGaN series) and 650V/1200V Silicon Carbide Schottky diodes (xSiC series). Our company is supported by a world-class engineering team specializing in GaN power systems, allowing us to provide clients with comprehensive power solutions and customized technical support.
