Unveiling THINKANTECH: Redefining Power Devices with Key Technology
Introduction
THINKANTECH is a brand dedicated to the research, development, sales, and application support of wide-bandgap semiconductor power devices and modules. As an original device manufacturer (ODM) of wide-bandgap (WBG) power devices, the company was co-founded by distinguished experts in power semiconductors, marketing elites from the power supply industry, and a group of entrepreneurial young professionals.
Our journey of excellence is marked by significant milestones:
2022: Recognized as an enterprise above the designated size.
2023: Certified as a National Sci-Tech-based SME and a National High-tech Enterprise, while also achieving ISO 9001 quality management system certification.
2024: Successfully obtained IATF 16949 certification for automotive-grade components and received accolades such as the ASPENCORE China IC Design Award.
2025: Further honored as a "Potential Unicorn Enterprise of Jiangsu Province" and an "Innovative Enterprise of Jiangsu Province".
Since its inception, THINKANTECH has been deeply engaged in the R&D, sales, and technical services for a comprehensive portfolio of power devices, including GaN HEMT, SiC MOSFET & SBD, Si MOSFET & IGBT, and both IGBT and SiC Modules. Our products are extensively integrated into critical power conversion and application fields such as marine electronics, e-mobility, power tools, low-altitude aviation, consumer electronics, and AI computing infrastructure.
Headquartered in Zhoushan, Zhejiang, THINKANTECH has established a robust network of branches across major Chinese cities including Nanjing, Shenzhen, Suzhou, and Yancheng. Our business footprint is continually expanding, with a growing presence in North America and the Taiwan region.
Our Key Strengths
Expert-Led Team: Our team comprises top-tier talent from the power device and power supply sectors.
Vertical Integration Philosophy: Focusing on power semiconductor technology, we vertically integrate resources to achieve optimal synergy between chips, modules, and power solutions.
Human-Centric Solutions: We deliver application-specific technologies, ensuring that the energy efficiency revolution is tailored to meet your precise needs.
Robust Technology Barrier: A portfolio of over 120 patents forms our strong competitive moat in the wide-bandgap semiconductor landscape.
Key Product Portfolio
GaN HEMT
THINKANTECH's GaN HEMT products deliver ultra-high frequency, high efficiency, and low-loss performance, enabling higher power density and more compact designs for diverse applications. The series features a core voltage rating of 700V, with drain currents (IDS) ranging from 8A to 50A. For instance, the X3G6503ATL model supports a 50A high current for high-power scenarios. With on-resistance (RDS(on)) as low as 32mΩ and a gate charge (Qg) of just 1.5nC, our devices significantly reduce power loss and enhance overall efficiency. Available in TOLT, DFN, and other package types, they offer excellent integration and adaptability for applications in new energy, energy storage, and telecommunications.
SiC MOSFET
Spanning a voltage range from 650V to 1700V, THINKANTECH's SiC MOSFETs are characterized by high breakdown voltage and low on-resistance, making them ideal for high-voltage, high-frequency applications like new energy and energy storage. 1700V Model (XM17001KT4): Rated at 1700V/5A with an on-resistance of 1.0mΩ, it serves high-voltage, low-current needs. 1200V Series: Includes models like the 1XST120016SMC, which handles 1200V/88A with an ultra-low 16mΩ on-resistance for ultra-high-power applications. 650V Series: Features models such as the X2M65020TL4, offering 110A high current and 22mΩ low internal resistance for medium-to-high power systems. Our comprehensive SiC MOSFET lineup provides optimized solutions for a wide array of high-voltage power conversion scenarios, promoting efficient and low-loss operation.
SiC SBD
THINKANTECH's SiC SBDs feature zero reverse recovery and superior high-voltage, high-frequency performance (up to 1700V+), reducing switching losses by up to 85%. Packaged in discrete forms like TO and DFN, they are perfectly suited for applications such as EV on-board chargers (OBC), photovoltaic inverters, and charging piles, where they significantly boost efficiency and power density. 650V Series: Offers a range from the compact 650V/6A DFN56 package (XD065A0065) to the high-power 650V/30A TO-247-2 package (XD065A020T4A) with a surge current of 160A. 1200V Model (XD120A020T4A): Provides 1200V/20A performance in a TO-247-2 package with a surge current of 144A. This versatile portfolio meets diverse high-efficiency rectification demands across multiple applications.
Development Milestones
Oct 2020: Company founded in Suzhou.
Apr 2021: Shenzhen office officially opened.
Jul 2021: First batch of GaN products shipped in volume.
Nov 2021: Headquarters relocated to Nanjing.
Dec 2021: First batch of SiC MOSFETs shipped in volume.
Apr 2022: Awarded "Growth Benchmark Enterprise of China's SMEs".
Dec 2022: SiC MOSFET shipments exceeded 2 million units; GaN shipments surpassed 1 million units.
Jan 2023: Recognized as one of "China's Top 10 GaN Power Device Companies".
Jan 2023: Became a qualified supplier for a top-five domestic electric drive manufacturer.
Feb 2023: Received "New Prominent Award in Power Device Industry" and "Excellence Award in SiC Industry".
Nov 2023: Obtained ISO 9001:2015 Quality Management System certification.
Dec 2023: Certified as a National High-tech Enterprise.
Apr 2024: Added to the whitelist of a leading global data center provider.
May 2024: Achieved IATF 16949 automotive quality management system certification.
Jun 2024: Signed a strategic cooperation agreement with Renesas Electronics to co-establish a wide-bandgap semiconductor digital power lab.
Jun 2024: Became a qualified supplier for a leading domestic automotive OEM.
Jul 2024: Commenced mass production at the Yancheng module packaging facility.
Dec 2024: Honored with the "2024 Wide-bandgap Semiconductor Application Promotion Breakthrough Award".
Mar 2025: Won "Best Power/Wide-Bandgap Device of the Year" at the China IC Design Awards for the X3G65045HMB GaN power module.
Mar 2025: Exhibited at APEC in the USA, receiving acclaim from the international market.
Jul 2025: Achieved the full-year sales target for 2025 ahead of schedule.
Aug 2025: Jointly exhibited with Renesas Electronics at elexcon 2025 in Shenzhen.
Oct 2025: Awarded dual honors as a "2025 Potential Unicorn Enterprise of Jiangsu Province" and a "2025 Innovative SME".
Applications
Marine Electronics
Our GaN and SiC power devices offer high power density, efficiency, and reliability, enhancing the energy efficiency of ship propulsion and deep-sea exploration equipment while enabling compact, lightweight designs suitable for harsh marine environments.
E-Mobility
As a driver of vehicle electrification, our SiC and GaN devices improve EV main inverter efficiency, extending driving range by approximately 10%, and enable 800V ultra-fast charging platforms.
Low-Altitude Aviation
Our WBG semiconductors are pivotal for the electric drive systems of drones and eVTOLs, significantly boosting flight performance and reliability through high-frequency and high-efficiency operation.
AI Computing
SiC and GaN devices are key to enhancing the energy efficiency of AI computing infrastructure, enabling power supplies to handle extreme power demands with higher efficiency and smaller form factors.
Energy & Power
Our SiC devices and IGBT modules are fundamental to modern power electronics, driving innovation in photovoltaics and new energy vehicles to support zero emission strategic goals.
Consumer Electronics
While silicon remains foundational, our SiC and GaN devices are revolutionizing the consumer electronics space, particularly in fast-charging and high-performance applications.
Power Tools
Our WBG semiconductors are reshaping the power tool landscape by increasing motor speed and torque, extending battery life, and enabling ultra-fast chargers that deliver a full charge in 20 minutes.
Subsidiaries of Fermi Electric Group
THINKANTECH: The key enterprise under Formitek Group, specializing in the design, R&D, and manufacturing of power semiconductor devices and modules.
Formitek: A high-end power module brand under Formitek Group, focusing on industrial and consumer-grade power solutions for the end market.
ZF Testing: A professional testing service company under Formitek Group, dedicated to the reliability testing of semiconductor devices and modules.
