Structural Analysis of SiC SBD (Silicon Carbide Schottky Diodes)
News & Updates
December 16, 2025
Structural Analysis of SiC SBD (Silicon Carbide Schottky Diodes)
SiC SBDs adopt a pure Schottky structure, in which a Schottky metal is directly applied to the drift layer, resulting in a relatively simple device architecture.
However, under high-temperature conditions, the resistance of the drift layer increases. As a result, compared to silicon fast recovery diodes (Si FRD), the peak surge current (IFSM) capability of pure Schottky SBDs tends to decrease due to self-heating effects when forward surge current flows.
In PFC (Power Factor Correction) circuits, if a bypass diode is not used, the inrush current generated during startup may lead to device failure in SBDs.
JBS Structure: The Wide-bandgap Solution
To address these limitations, wide-bandgap SiC SBDs adopt a Junction Barrier Schottky (JBS) structure, which significantly improves surge current capability and approximately doubling the IFSM performance compared to traditional devices.
In a JBS structure:
Small PN junctions are embedded within the Schottky interface. During high current conditions, these PN junctions inject holes (minority carriers). This helps suppress the increase in drift layer resistance.
As a result, JBS-based SiC SBDs exhibit:
Improved surge current tolerance Enhanced robustness under high current stress.
This enables reliable operation even in PFC circuits without bypass diodes.
Conclusion
The transition from pure Schottky to JBS structures represents a key advancement in SiC SBD technology, delivering higher surge current capability, improved thermal stability, and greater reliability in demanding power applications.
About THINKANTECH
THINKANTECH is a manufacturer of wide-bandgap power semiconductor devices, founded by industry experts and a team of innovative professionals. It is specializing in:
Si MOSFETs & IGBTs GaN HEMTs SiC MOSFETs & SBDs IGBT and SiC modules
Its products are widely applied in consumer electronics, photovoltaics & energy storage, automotive systems, AI servers, and industrial automation.
