THINKANTECH SiC Power Modules: Unlocking New Possibilities in High-Voltage, High-Efficiency Applications
THINKANTECH SiC Power Modules: Unlocking New Possibilities in High-Voltage, High-Efficiency Applications
THINKANTECH is proud to announce its autonomously designed and developed SiC MOSFETs and SiC Power Modules. Our modules feature a spectrum of integrated topologies-including half-bridge, full-bridge, and six-pack configurations-engineered to seamlessly adapt to diverse applications such as solar inverters, electric vehicle inverters, industrial motor drives, and uninterruptible power supplies (UPS).
While the high-frequency operation of SiC devices offers significant advantages, it also presents design challenges. Parasitic elements can trigger false turn-ons, and fully decoupling the gate drive from the main power circuit is notoriously difficult. This often forces designers into complex calculations to ensure proper matching between gate drivers and SiC devices. THINKANTECH's SiC Power Modules eliminate these hurdles. We deliver an all-in-one, integrated solution that removes the tedious steps of component selection, driver matching, and trace routing, dramatically simplifying the development workflow.
A prime example of our innovation is the new-generation SiC Power Module, XS140SPR120N1S. This module integrates a diode rectifier bridge with a formidable 1600V reverse voltage rating, a low forward voltage drop of 1.2V, and an ultra-low junction-to-case thermal resistance of just 0.751 K/W.
Each SiC MOSFET within the module boasts:
A 1200V blocking voltage and a wide -4V to 18V gate drive range, compatible with standard MOSFET drivers. An exceptionally low on-resistance (RDS(on)) of only 140mΩ. Minimal parasitic capacitance (Ciss of 620pF) and a low junction-to-case thermal resistance of 2.18 K/W, placing it at the forefront of the 1200V/15A SiC MOSFET class. In terms of reverse conduction, the module features a mere 29nC of reverse recovery charge (Qrr) and a lightning-fast 20ns reverse recovery time (trr).
Furthermore, the XS140SPR120N1S is a masterpiece of thermal and electrical engineering. Its double-sided cooling and vertical integration structure revolutionize thermal management for power converters. The inclusion of a Kelvin Source connection for the SiC MOSFETs provides independent channels for the gate drive and power paths, effectively minimizing noise interference.
This design feature masterfully decouples the gate drive circuit from the main power circuit, creating an independent control loop that mitigates the impact of source parasitic inductance. In conventional SiC MOSFETs with a single source pin, a positive di/dt in the main circuit induces a voltage that lowers the effective gate-source voltage, increasing turn-on losses. Conversely, a negative di/dt raises this voltage, increasing turn-off losses. The Kelvin Source pin shields the gate from these disruptive fluctuations, ensuring stable and efficient operation.
The module's built-in NTC thermistor offers a 5kΩ nominal resistance at room temperature with a minimal power dissipation of 20mW. A stray inductance as low as 30nH, combined with a low-inductance pinout design, unleashes high-speed switching capabilities while preventing the voltage overshoot and electromagnetic interference (EMI) often caused by larger parasitic inductances.
This combination of improved thermal performance, which lowers the SiC chip's junction temperature, and a compact, low-inductance design allows the module to achieve high-speed switching with low capacitance. The result is minimal switching losses and superior system efficiency.
Housed in THINKANTECH's proprietary Easy1B package, the module measures a compact 62.4mm x 33.8mm x 16.4mm. Our SiC Power Modules provide a modular and scalable solution for system design, guaranteeing the reliability and longevity of power converters even under the most demanding conditions. The key of our design philosophy revolves around high power density, versatility, compactness, ease of assembly, scalability, and robustness to meet the harshest industrial demands. This unique packaging empowers the module with powerful thermal management and outstanding power-handling performance.
The primary advantages of SiC power modules are undeniable: higher energy conversion efficiency, exceptional high-temperature and high-voltage tolerance, high-frequency switching characteristics, and significant system integration benefits. These attributes make them the ideal choice for new energy vehicles, renewable energy, and industrial power systems.
About THINKANTECH
THINKANTECH is a wide-bandgap power device powerhouse, born from the vision of distinguished experts in power semiconductors, marketers from the power industry, and a dynamic group of young professionals driven by an entrepreneurial dream. Our journey of excellence is marked by key milestones: recognized as an "above-scale enterprise" in 2022; honored as a "National Sci-tech SME" and "National High-tech Enterprise" in 2023, alongside achieving ISO 9001 certification. In 2024, we proudly secured the IATF 16949 certification, solidifying our commitment to automotive-grade quality.
