The “Golden Pair”: Measured Performance of a Demo Solution Combining THINKANTECH GaN and SiC Devices
News & Updates
December 16, 2025
The “Golden Pair”: Measured Performance of a Demo Solution Combining THINKANTECH GaN and SiC Devices
1. Solution Overview
THINKANTECH 12V / 8.33A / 100W Demo Power Supply
This demo solution showcases the complementary advantages of GaN and SiC devices in a high-efficiency power design.
Key Components
X Capacitor: 0.33µF (X2)
NTC: 2.5Ω, Φ9mm
Bridge Rectifier: GBU1508
PFC MOSFET: X3G6516B5 (GaN)
PFC Diode: XD065A0065 (SiC)
Bulk Capacitor: 100µF / 450V
LLC MOSFET: X3G6516B5 (GaN)
Transformer: ATQ2516
Main Controller: TEA2017
Secondary Rectification MOS: GN014N04AL
Output Capacitance: 3700µF (with inductor filtering)
2. Performance Testing
Efficiency Performance
Under start conditions (NTC shorted), tested from 20% load to full load:
110V Input: Efficiency = 92.0% / 93.3% / 93.6% / 93.8% / 93.9%
220V Input: Efficiency = 93.0% / 95.0% / 95.7% / 95.8% / 96.0%
Startup Time
110V Input: 524 ms 220V Input: 583 ms
Hold-Up Time (Full Load)
110V Input: 34.6 ms 220V Input: 35.4 ms
Output Voltage Regulation
Under 25%-75% load:
Minimum Output Voltage: 12.02V Maximum Output Voltage: 12.32V
Ripple Performance
Measured with 10µF + 0.1µF probe capacitance and 20MHz bandwidth:
Full Load Ripple (Low Frequency): 20 mV (both 110V and 220V input)
Full Load Ripple (High Frequency): 20 mV (both 110V and 220V input)
3. Product Highlights
This demo integrates two THINKANTECH flagship devices:
X3G6516B5 GaN Switching Device XD065A0065 SiC Diode
GaN Device: X3G6516B5
Key Specifications
650V enhancement-mode device Rds(on): 150 mΩ Continuous current: 13A
Key Features
Low on-resistance and input capacitance results in improved efficiency
Zero reverse recovery loss leads to ideal for high-frequency operation
Optimized for PFC boost topologies for higher power density
Typical Applications
Consumer Electronics
Fast chargers and wireless charging modules Compact, lightweight, high-efficiency designs
Industrial Applications
Audio amplifiers: reduced size, lower heat, higher efficiency
Inverters: stable operation in high-temperature environments
Adapters: improved electron mobility and lower losses
Server power supplies: higher power density and fewer components
Automotive
On-board chargers (OBC): compact design and efficient high-voltage conversion
SiC Diode: XD065A0065
Key Specifications
650V rating 6A current at 163°C
Key Features
Zero reverse recovery current results in reduced switching loss
Positive temperature coefficient leads to easy parallel operation
High-frequency compatibility with low thermal requirements
Typical Applications
Industrial Electronics
Amplifiers: stable operation with excellent thermal performance
Inverters: improved thermal management and efficiency
Adapters
High reliability under elevated temperature and voltage
Server Power Supplies
Enhanced thermal performance and improved system stability
Automotive
On-board chargers: high breakdown strength and long lifespan
4. Synergistic Advantages: GaN + SiC
When combined in the PFC stage, GaN and SiC devices deliver high reliability, high power density, and high efficiency.
This complementary pairing enables the demo solution to achieve compact design, high integration, and superior energy efficiency.
Industry Perspective
Wide bandgap semiconductor technology has evolved since the 1950s through material innovation, application-driven development, cost optimization, and ecosystem expansion.
Driven by ultra-wide bandgap advancements and carbon neutrality goals, it is reshaping the technological foundation of energy and communication systems.
About THINKANTECH Technology
THINKANTECH is a technology-driven company focused on GaN and SiC power semiconductor devices, leveraging a vertically integrated supply chain.
Its products are widely used in consumer electronics, industrial control systems, and renewable energy applications.
THINKANTECH continues to play a key role in advancing domestic semiconductor innovation and self-reliance.
Contact
Nanjing HQ: +86-25-51180705
Shenzhen Office: +86-755-36991759
Email: xinkansen@x-ipm.com
Website: https://x-ipm.com
