Tested at 96% Conversion Efficiency: THINKANTECH Unveils its 350W Power Module, a 'Hexagonal Warrior' for the Industry
Tested at 96% Conversion Efficiency: THINKANTECH Unveils its 350W Power Module, a 'Hexagonal Warrior' for the Industry
THINKANTECH proudly announces the launch of its new 350W power module, a superior power solution engineered for high-power applications. By leveraging an innovative PFC+LLC architecture combined with advanced synchronous rectification technology, this module establishes a new benchmark for performance and efficiency.
The design masterfully integrates two THINKANTECH X3G6509B8 GaN switches to drive the PFC boost stage, complemented by two XD6506F8 SiC diodes for rectification. The LLC half-bridge circuit is also constructed with two X3G6509B8 GaN devices, delivering a stable 48V/7.3A output. This advanced topology achieves a remarkable conversion efficiency of up to 96%, making it an ideal fit for high-power Power over Ethernet (PoE) equipment and demanding USB PD3.1 240W fast-charging applications.
The module's architecture is meticulously planned for optimal performance. It incorporates the input EMI circuit, PFC boost inductor, high-voltage filter capacitor, and LLC transformer. The output filter capacitors are vertically arranged, ensuring a pure and stable power supply. Both input and output utilize AC socket designs, significantly simplifying system integration. The reverse side of the module reveals an orderly arrangement of the PFC boost switches, rectifier diodes, LLC half-bridge switches, and synchronous rectifier MOSFETs, all housed within a compact and maintenance-friendly structure.
Detailed Solution Parameters
This 350W power module is governed by the NXP TEA2017, a 2-in-1 controller for both PFC and LLC stages. The output synchronous rectification is managed by the NXP TEA2095. On the primary side, two THINKANTECH X3G6509B8 GaN switches are employed for the PFC boost, while another two form the LLC half-bridge.
For the PFC boost rectification, two THINKANTECH XD6506F8 SiC diodes are used in parallel. The XD6506F8 is a 650V SiC diode rated for an 11A operating current at 135°C. Key features include zero reverse recovery current, a positive temperature coefficient for easy paralleling, high-speed switching capabilities, low switching losses, and minimal thermal management requirements.
Key Specifications for THINKANTECH X3G6509B8 and XD6506F8:
The primary controller, the NXP TEA2017AAT, is a digitally configurable LLC and PFC combo controller designed for high-efficiency resonant power supplies. By integrating both functions into a single chip, it eliminates the need for two separate ICs, outputting drive signals for both PFC and LLC stages simultaneously. It can be configured for DCM/QR, fixed-frequency CCM, or multi-mode operation to optimize PFC efficiency, which simplifies the power supply design and reduces the component count. The TEA2017AAT is housed in a compact narrow-body SO16 package.
The synchronous rectification controller is the NXP TEA2095, a dual-channel controller with two integrated drivers capable of driving two synchronous rectifier MOSFETs independently. It utilizes an adaptive gate driver to maximize operational efficiency.
The output synchronous rectification circuit consists of two MOSFETs managed by the controller. These MOSFETs are also from THINKANTECH, model XUS15004NTL4. This is a 150V N-channel MOSFET featuring a low on-resistance of 3.9mΩ in a TOLL package.
Key Specifications for THINKANTECH XUS15004NTL4:
Product Dimensions
The 350W PCBA measures 160mm x 80mm.
Product Features
Fast Battery Charging
Compact Size & Lightweight
High Power Density
Low Noise Operation
High Conversion Efficiency
High Reliability & Strong Vibration Resistance
Comprehensive Protection Functions
Product Applications
The module is ideally suited for applications such as:
Electric Motorcycle Charging Power Supplies
Backup Power for Communication Base Stations
Backup Power for Server Rooms
About THINKANTECH
THINKANTECH is an innovative designer and manufacturer of wide-bandgap power devices, established by a formidable alliance of talent: experts in power semiconductors with prestigious international experience, market leaders from the power supply industry, and a passionate team of ambitious young professionals. Our trajectory of excellence is marked by significant milestones, including ISO 9001 (2023) and the stringent IATF 16949 (2024) automotive-grade quality management certifications.
